DUV ANR photoresists: Resist design considerations.
نویسندگان
چکیده
منابع مشابه
Modeling of EUV photoresists with a resist point spread function
Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, ...
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Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm), with an i-line intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photoresists is matche...
متن کاملExposure of Photoresists
Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm) (fig. right-hand), with an iline intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photo...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 1990
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.3.401